M.Sc. Christian Bohn

  • Geb. 30.10
    Raum 1.32
    Engesserstraße 5
    76131 Karlsruhe

  • Breitbandige Millimeterwellenschaltungen
  • Aufbau und Verbindungstechnik von RFICs
  • Electronic-Photonic Integrated Systems

Publikationen


2023
A 100 GBd PAM-4 Combiner and Driver in SiGe BiCMOS
Bohn, C.; Kaynak, M.; Zwick, T.; Ulusoy, A. Ç.
2023. IEEE Microwave and Wireless Technology Letters, 33 (9), 1337–1340. doi:10.1109/LMWT.2023.3293040
Ultralow-Power W-Band Low-Noise Amplifier Design in 130-nm SiGe BiCMOS
Smirnova, K.; Bohn, C.; Kaynak, M.; Ulusoy, A. Ç.
2023. IEEE microwave and wireless components letters, 33 (8), 1171–1174. doi:10.1109/LMWT.2023.3279574
100-GBd Linear Optical Modulator Driver for Short-Reach Links in 130-nm SiGe:C BiCMOS
Tsai, T.-C.; Bohn, C.; Ulusoy, A. Ç.
2023. 2023 18th European Microwave Integrated Circuits Conference (EuMIC), Berlin, 18th-19th September 2023, 113 – 116, Institute of Electrical and Electronics Engineers (IEEE). doi:10.23919/EuMIC58042.2023.10288862
2022
Aerosol Jet Printed Microstrip Lines on Polyimide for D-Band
Gramlich, G.; Hebeler, J.; Bohn, C.; Lemmer, U.; Zwick, T.
2022. 2021 51st European Microwave Conference (EuMC): 4–6 April 2022, London, UK, 551–554, Institute of Electrical and Electronics Engineers (IEEE). doi:10.23919/EuMC50147.2022.9784303
Ultra-Wideband Frequency Doubler with Differential Outputs in SiGe BiCMOS
Bohn, C.; Kaynak, M.; Zwick, T.; Ulusoy, A. Ç.
2022. 2022 IEEE 22nd Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems: 16–19 January 2022 ; Las Vegas, Nevada, USA, 58–61, Institute of Electrical and Electronics Engineers (IEEE). doi:10.1109/SiRF53094.2022.9720043
THz Broadband Antenna on GaAs using Laser-structured Fused Silica Matching Layer
Kretschmann, M.; Bohn, C.; Nuss, B.; Bhutani, A.; Tessmann, A.; Leuther, A.; Zwick, T.
2022. 2022 52nd European Microwave Conference (EuMC), 147–150, Institute of Electrical and Electronics Engineers (IEEE). doi:10.23919/EuMC54642.2022.9924427
2021
A Linear and Efficient Power Amplifier Supporting Wideband 64-QAM for 5G Applications from 26 to 30 GHz in SiGe:C BiCMOS
Tsai, T.-C.; Bohn, C.; Hebeler, J.; Kaynak, M.; Ulusoy, A. Ç.
2021. 2021 IEEE RFIC Symposium: 7-9 June 2021, Atlanta, Georgia, USA, 127–130, Institute of Electrical and Electronics Engineers (IEEE). doi:10.1109/RFIC51843.2021.9490461
2019
50GBit/s PAM-4 Driver Circuit Based on Variable Gain Distributed Power Combiner
Vangerow, C. v.; Bohn, C.; Zwickel, H.; Koos, C.; Zwick, T.
2019. IEEE 19th Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems (SiRF), 1–3, Institute of Electrical and Electronics Engineers (IEEE). doi:10.1109/sirf.2019.8709086
2018
All-NbN technology on sapphire substrates for SIS-based THz receivers
Merker, M.; Bohn, C.; Schmid, A.; Ilin, K. S.; Siegel, M.
2018. 29th IEEE International Symposium on Space Terahertz Technology, ISSTT 2018: Proceedings, 117–119
2017
NbN/AlN/NbN Josephson Junctions on Sapphire for SIS Receiver Applications
Merker, M.; Bohn, C.; Völlinger, M.; Ilin, K.; Siegel, M.
2017. IEEE transactions on applied superconductivity, 27 (4), 7779058. doi:10.1109/TASC.2016.2631841